An Investigation of the Effects of Recessed - Gate Geometry on Mesfet Performance
نویسنده
چکیده
This paper presents the preliminary results of an investigation of the effect of the recess geometry on the breakdown characteristics of a GaAs MESFET. It is found that the angle of the recess may affect the the gate-drain breakdown voltage of the device, shallower angles performing better than sharper angles. Placing the gate contact towards the source end of the recess has also been found to improve the breakdown performance.
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تاریخ انتشار 2007